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3N163 Series
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Semiconductors
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MOSFETS
Selected Characteristics:
Breakdown V Min:
-40 V
RDS (on) (Ohm) Max:
250 O
Matching Products:
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Available Characteristics
Other
RDS (on) (Ohm) Max:
250 O
Channel:
P-Channel Enhancement Mode
Breakdown V Min:
-40 V
IGSS (pA) Max:
-10 pA
Package:
TO-72
Available Products in 3N163 Series
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Unit Price
3N163
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