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3N172 Series
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Semiconductors
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MOSFETS
Selected Characteristics:
Channel:
P-Channel Enhancement Mode
Breakdown V Min:
-30 V
Matching Products:
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Available Characteristics
Other
RDS (on) (Ohm) Max:
350 O
Channel:
P-Channel Enhancement Mode
Breakdown V Min:
-30 V
IGSS (pA) Max:
-500 pA
Package:
TO-72
Available Products in 3N172 Series
Part Number
Image
Manufacturer
Unit Price
3N173
Calogic
Call