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2N4351 Series
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Semiconductors
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MOSFETS
Selected Characteristics:
RDS (on) (Ohm) Max:
300 O
Breakdown V Min:
25 V
Matching Products:
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Available Characteristics
Other
RDS (on) (Ohm) Max:
300 O
Channel:
N-Channel Enhancement Mode
Breakdown V Min:
25 V
IGSS (pA) Max:
10 pA
Package:
TO-72
Available Products in 2N4351 Series
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Unit Price
2N4351
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