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3N170 Series
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Semiconductors
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MOSFETS
Selected Characteristics:
Channel:
N-Channel Enhancement Mode
IGSS (pA) Max:
± 10
Breakdown V Min:
25 V
Matching Products:
2
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Available Characteristics
Other
RDS (on) (Ohm) Max:
200 O
Channel:
N-Channel Enhancement Mode
Breakdown V Min:
25 V
IGSS (pA) Max:
± 10
Package:
TO-72
Available Products in 3N170 Series
Part Number
Image
Manufacturer
Unit Price
3N170
Calogic
Call
3N171
Calogic
Call